N-channel RF power MOSFET for S-band applications, operating from 2.11GHz to 2.17GHz. Features a 65V drain-to-source voltage, 1.4A current rating, and 50W maximum output power. Delivers 16dB gain at a 28V test voltage, with a gate-to-source voltage of 10V. Designed for surface mount with tape and reel packaging, this component is halogen-free, lead-free, and RoHS compliant, with an operating temperature range of -65°C to 225°C.
Frequency2.17GHz
Voltage Rating65V
Current Rating1.4A
MountingSurface Mount
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Technical Specifications
NXP MRF7S21170HSR3 technical specifications.
General
| Current Rating | 1.4A |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 16dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 2.17GHz |
| Min Frequency | 2.11GHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 50W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 50W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| DC Rated Voltage | 28V |
| Weight | 0.238367oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF7S21170HSR3 Datasheet
Download the complete datasheet for NXP MRF7S21170HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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