The MRF7S21210HR3 is a high-power N-channel RF transistor from NXP, rated for a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a drain to source breakdown voltage of 65V and a gate to source voltage of 10V. The transistor is RoHS compliant and packaged on tape and reel in quantities of 250. It is suitable for high-frequency applications up to 2.17GHz and has a gain of 18.5dB.
Frequency2.17GHz
Voltage Rating65V
PolarityN-CHANNEL
Power63W
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Technical Specifications
NXP MRF7S21210HR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 2.17GHz |
| Gain | 18.5dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Output Power | 63W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Weight | 0.226635oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRF7S21210HR3 Datasheet
Download the complete datasheet for NXP MRF7S21210HR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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