The MRF8S18120HR5 is a N-Channel RF Power MOSFET from NXP with a Drain to Source Breakdown Voltage of 65V and a Frequency of 1.81GHz. It has a Gain of 18.2dB and an Output Power of 72W. The device is packaged in Tape and Reel with 50 pieces per reel and is RoHS Compliant. It can operate at a maximum temperature of 150°C and has a Gate to Source Voltage of 10V.
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| Drain to Source Breakdown Voltage | 65V |
| Drain to Source Voltage (Vdss) | 65V |
| Frequency | 1.81GHz |
| Gain | 18.2dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Max Operating Temperature | 150°C |
| Output Power | 72W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 65V |
| Weight | 0.226635oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRF8S18120HR5 to view detailed technical specifications.
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