The MRF8S9220HSR3 is a single enhancement mode RF transistor from NXP, designed for 1-carrier W-CDMA operation. It has a maximum drain source voltage of 70V and operates over a temperature range of -65°C to 225°C. The transistor is packaged in a NI-780S surface mount package, measuring 20.7mm in length, 9.91mm in width, and 4.32mm in height. It is suitable for use in RF applications.
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NXP MRF8S9220HSR3 technical specifications.
| Package/Case | NI-780S |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 20.7(Max) |
| Package Width (mm) | 9.91(Max) |
| Package Height (mm) | 4.32(Max) |
| Seated Plane Height (mm) | 4.32(Max) |
| Package Weight (g) | 4.763 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Channel Type | N |
| Configuration | Single |
| Channel Mode | Enhancement |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 70V |
| Minimum Frequency | 920MHz |
| Maximum Frequency | 960MHz |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 225°C |
| Mode of Operation | 1-Carrier W-CDMA |
| Typical Power Gain | 19.8dB |
| Output Power | 65(Typ)W |
| Cage Code | H1R01 |
| EU RoHS | Yes |
| HTS Code | 8541290075 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
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