The MRFE6S9130HSR3 is a surface-mount N-CHANNEL RF transistor with a breakdown voltage of 66V and a frequency of 880MHz. It has a gain of 19.2dB and can operate at a gate to source voltage of 12V. The transistor is halogen free and lead free, and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
Frequency880MHz
Voltage Rating66V
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
NXP MRFE6S9130HSR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 66V |
| Drain to Source Voltage (Vdss) | 66V |
| Frequency | 880MHz |
| Gain | 19.2dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Output Power | 27W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Test Voltage | 28V |
| Voltage Rating | 66V |
| Weight | 0.167294oz |
Compliance
| RoHS | Compliant |
Datasheet
NXP MRFE6S9130HSR3 Datasheet
Download the complete datasheet for NXP MRFE6S9130HSR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.