The MRFE6S9160HR3 is a high-frequency N-CHANNEL RF transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a voltage rating of 66V and a maximum output power of 35W. The transistor is packaged in a tape and reel format with 250 units per package. It is lead free and halogen free, and is suitable for use in high-frequency applications up to 960MHz.
Frequency880MHz
Voltage Rating66V
MountingScrew
PolarityN-CHANNEL
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Technical Specifications
NXP MRFE6S9160HR3 technical specifications.
General
| Drain to Source Breakdown Voltage | 66V |
| Drain to Source Voltage (Vdss) | 66V |
| Frequency | 880MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 12V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 960MHz |
| Min Frequency | 865MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 35W |
| Mount | Screw |
| Number of Elements | 1 |
| Output Power | 35W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Test Voltage | 28V |
| Voltage Rating | 66V |
| Weight | 0.22612oz |
Compliance
| RoHS | Not CompliantNo |
Datasheet
NXP MRFE6S9160HR3 Datasheet
Download the complete datasheet for NXP MRFE6S9160HR3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.