The MRFE6S9160HSR3 is an N-CHANNEL RF transistor with a breakdown voltage of 66V and a frequency range of 865MHz to 960MHz. It operates within a temperature range of -65°C to 225°C and has a maximum output power of 35W. This transistor is RoHS compliant and is available in a surface mount package.
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| Drain to Source Breakdown Voltage | 66V |
| Drain to Source Voltage (Vdss) | 66V |
| Frequency | 880MHz |
| Gain | 21dB |
| Gate to Source Voltage (Vgs) | 12V |
| Max Frequency | 960MHz |
| Min Frequency | 865MHz |
| Max Operating Temperature | 225°C |
| Min Operating Temperature | -65°C |
| Max Output Power | 35W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 35W |
| Package Quantity | 250 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| RoHS Compliant | Yes |
| Test Voltage | 28V |
| Voltage Rating | 66V |
| Weight | 0.11396oz |
| RoHS | Compliant |
Download the complete datasheet for NXP MRFE6S9160HSR3 to view detailed technical specifications.
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