The NXP MRFE6VP8600HSR5 is a high-power N-CHANNEL RF transistor with a drain to source breakdown voltage of 140V and a maximum operating frequency of 860MHz. It has a maximum output power of 125W and a maximum power dissipation of 1.052kW. The transistor is packaged in a FLATPACK, R-CDFP-F4 package and is suitable for surface mount applications. The operating temperature range is from -65°C to 150°C, and it is compliant with RoHS regulations.
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NXP MRFE6VP8600HSR5 technical specifications.
| Drain to Source Breakdown Voltage | 140V |
| Drain to Source Voltage (Vdss) | 140V |
| Frequency | 860MHz |
| Gain | 19.3dB |
| Gate to Source Voltage (Vgs) | 10V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Frequency | 860MHz |
| Min Frequency | 470MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.052kW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 125W |
| Package Quantity | 50 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.052kW |
| RoHS Compliant | Yes |
| Test Voltage | 50V |
| Voltage Rating | 130V |
| Weight | 0.46787oz |
| RoHS | Compliant |
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