RF Power MOSFET, N-Channel, featuring a 133V drain-source voltage and a 3-pin TO-270 package with gull-wing leads. Designed for high-frequency applications, this transistor operates across a wide temperature range from -40°C to 150°C. It offers a single element with dual terminal positioning, suitable for demanding RF power amplification.
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Technical Specifications
NXP MRFE6VS25GNR1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.75 |
| REACH | unknown |
| Military Spec | False |
Datasheet
NXP MRFE6VS25GNR1 Datasheet
Download the complete datasheet for NXP MRFE6VS25GNR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.