The ON5520,215 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a continuous drain current of 300mA and a drain to source breakdown voltage of 60V. The device also features a gate to source voltage of 30V and a maximum power dissipation of 830mW. The ON5520,215 is packaged in a TO-236-3 and is available in quantities of 3000, packaged on tape and reel.
PackageTO-236-3
MountingSurface Mount
PolarityN-CHANNEL
Power830mW
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Technical Specifications
NXP ON5520,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 300mA |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5R |
| Drain to Source Voltage (Vdss) | 60V |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 830mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 830mW |
| Radiation Hardening | No |
Compliance
| RoHS | Compliant |
Datasheet
NXP ON5520,215 Datasheet
Download the complete datasheet for NXP ON5520,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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