RF BJT NPN transistor, 10V VCEO, 50mA max collector current, and 360mW power dissipation. Features an 8GHz transition frequency and 15dB gain, suitable for high-frequency applications. Packaged in a TO-236AB surface-mount case, this component operates from -65°C to 175°C and is supplied on tape and reel.
Frequency8GHz
PackageTO-236AB
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBR941,215 technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 10V |
| Collector Emitter Voltage (VCEO) | 10V |
| Collector-emitter Voltage-Max | 10V |
| Emitter Base Voltage (VEBO) | 1.5V |
| Frequency | 8GHz |
| Gain | 15dB |
| Gain Bandwidth Product | 8GHz |
| Height | 1mm |
| Length | 3mm |
| Max Breakdown Voltage | 10V |
| Max Collector Current | 50mA |
| Max Frequency | 8GHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 360mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 360mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 8GHz |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBR941,215 Datasheet
Download the complete datasheet for NXP PBR941,215 to view detailed technical specifications.
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