NPN Bipolar Junction Transistor (BJT) in TSOP package. Features 20V collector-emitter breakdown voltage and 4A maximum collector current. Offers low VCEsat of 420mV and a transition frequency of 100MHz. Operates from -65°C to 150°C with 1.1W maximum power dissipation. Surface mountable and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PBSS301ND,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PBSS301ND,115 technical specifications.
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 420mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS301ND,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
