NPN Bipolar Junction Transistor (BJT) in TSOP package. Features 20V collector-emitter breakdown voltage and 4A maximum collector current. Offers low VCEsat of 420mV and a transition frequency of 100MHz. Operates from -65°C to 150°C with 1.1W maximum power dissipation. Surface mountable and RoHS compliant.
Frequency100MHz
PackageTSOP
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PBSS301ND,115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 420mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS301ND,115 Datasheet
Download the complete datasheet for NXP PBSS301ND,115 to view detailed technical specifications.
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