PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 15V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a low VCEsat of 250mV and a minimum hFE of 200. Operates with a transition frequency of 280MHz and is RoHS compliant. Packaged in a 3-pin SC-75 surface mount package.
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NXP PBSS3515E,115 technical specifications.
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 15V |
| Collector Emitter Breakdown Voltage | 15V |
| Collector Emitter Voltage (VCEO) | 15V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 280MHz |
| Gain Bandwidth Product | 280MHz |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 15V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 250mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 280MHz |
| RoHS | Compliant |
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