The NPN Bipolar Junction Transistor is a high-frequency device with a collector base voltage of 40V and a collector emitter saturation voltage of 500mV. It can handle a maximum collector current of 1A and operates within a temperature range of -65°C to 150°C. The transistor is packaged in a TO-236AB plastic package and is suitable for surface mount applications. It is RoHS compliant and available in a cut tape packaging format.
Frequency150MHz
PackageTO-236AB
MountingSurface Mount
Power300mW
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Technical Specifications
NXP PBSS4140T technical specifications.
General
| Package/Case | TO-236AB |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Saturation Voltage | 500mV |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1mm |
| Length | 3mm |
| Max Collector Current | 1A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 450mW |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4140T Datasheet
Download the complete datasheet for NXP PBSS4140T to view detailed technical specifications.
No datasheet is available for this part.