The PBSS4350Z/DG,135 NPN bipolar junction transistor has a collector base voltage rating of 60V and a maximum collector current of 3A. It operates within a temperature range of -65°C to 150°C and has a maximum power dissipation of 2W. This transistor is designed for surface mount applications and is available in tape and reel packaging. It is compliant with RoHS regulations.
MountingSurface Mount
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Technical Specifications
NXP PBSS4350Z/DG,135 technical specifications.
General
| Collector Base Voltage (VCBO) | 60V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4350Z/DG,135 Datasheet
Download the complete datasheet for NXP PBSS4350Z/DG,135 to view detailed technical specifications.
No datasheet is available for this part.