The PBSS4580PA is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum power dissipation of 2.1W. It is packaged in a SOT-1061 plastic package with a 2 x 2 mm footprint and 0.65 mm height. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The PBSS4580PA is suitable for use in high-power applications where a high current gain and high voltage rating are required.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PBSS4580PA datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PBSS4580PA technical specifications.
| Package/Case | SOT-1061 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Packaging | Cut Tape |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 155MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS4580PA to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
