The PBSS4580PA is an NPN bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum power dissipation of 2.1W. It is packaged in a SOT-1061 plastic package with a 2 x 2 mm footprint and 0.65 mm height. The transistor operates over a temperature range of -55°C to 150°C and is RoHS compliant. The PBSS4580PA is suitable for use in high-power applications where a high current gain and high voltage rating are required.
PackageSOT-1061
PolarityNPN
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Technical Specifications
NXP PBSS4580PA technical specifications.
General
| Package/Case | SOT-1061 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Voltage (VCEO) | 80V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.1W |
| Packaging | Cut Tape |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 155MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS4580PA Datasheet
Download the complete datasheet for NXP PBSS4580PA to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.