The PBSS5130T,215 is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 1A. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 480mW. The transistor is packaged in a TO-236-3 plastic package and is lead free and RoHS compliant.
PackageTO-236-3
Voltage30V
Current15A
MountingSurface Mount
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Technical Specifications
NXP PBSS5130T,215 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector-emitter Voltage-Max | 225mV |
| Current | 15A |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 480mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5130T,215 Datasheet
Download the complete datasheet for NXP PBSS5130T,215 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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