The PBSS5160K,115 is a surface mount bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 700mA. It has a maximum power dissipation of 425mW and is packaged in a TO-236-3 case. The transistor is RoHS compliant and available in tape and reel packaging with 3000 units per reel.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
NXP PBSS5160K,115 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 340mV |
| Max Collector Current | 700mA |
| Max Power Dissipation | 425mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| Transition Frequency | 185MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5160K,115 Datasheet
Download the complete datasheet for NXP PBSS5160K,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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