PNP Bipolar Junction Transistor (BJT) in TSOP package. Features a 50V collector-emitter breakdown voltage and 3A maximum collector current. Offers low VCEsat of 300mV and a transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 750mW. Surface mountable and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PBSS5350D,135 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PBSS5350D,135 technical specifications.
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Voltage | 50V |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS5350D,135 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
