PNP Bipolar Junction Transistor (BJT) in TSOP package. Features a 50V collector-emitter breakdown voltage and 3A maximum collector current. Offers low VCEsat of 300mV and a transition frequency of 100MHz. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 750mW. Surface mountable and RoHS compliant.
Frequency100MHz
PackageTSOP
Voltage50V
Current3A
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Technical Specifications
NXP PBSS5350D,135 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current | 3A |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 750mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 750mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Voltage | 50V |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5350D,135 Datasheet
Download the complete datasheet for NXP PBSS5350D,135 to view detailed technical specifications.
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