PNP Bipolar Junction Transistor (BJT) in a TO-261-4 (SC-73) surface mount package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. Offers a low collector-emitter saturation voltage of 300mV and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PBSS5350Z,135 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PBSS5350Z,135 technical specifications.
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 300mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS5350Z,135 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
