PNP Bipolar Junction Transistor (BJT) in a TO-261-4 (SC-73) surface mount package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 50V. Offers a low collector-emitter saturation voltage of 300mV and a transition frequency of 100MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2W. RoHS compliant and lead-free.
PackageTO-261-4
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS5350Z,135 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | -50V |
| Collector-emitter Voltage-Max | 300mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5350Z,135 Datasheet
Download the complete datasheet for NXP PBSS5350Z,135 to view detailed technical specifications.
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