PNP Bipolar Junction Transistor (BJT) in TSOP package, designed for surface mount applications. Features a maximum collector current of 4A and a collector-emitter voltage (VCEO) of 20V. Offers a low VCEsat of 420mV and a transition frequency of 80MHz. Operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 2.5W. RoHS compliant and lead-free.
Frequency80MHz
PackageTSOP
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PBSS5420D,115 technical specifications.
General
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 20V |
| Collector Emitter Breakdown Voltage | 20V |
| Collector Emitter Voltage (VCEO) | 20V |
| Collector-emitter Voltage-Max | 420mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 80MHz |
| Gain Bandwidth Product | 80MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 20V |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Compliant |
Datasheet
NXP PBSS5420D,115 Datasheet
Download the complete datasheet for NXP PBSS5420D,115 to view detailed technical specifications.
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