
The NPN bipolar junction transistor is a surface mount device with a maximum collector current of 1A and a maximum power dissipation of 700mW. It has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. The transistor is packaged in a TSOP-6 package and is lead free and RoHS compliant.
NXP PBSS8110D,115 technical specifications.
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 200mV |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| RoHS | Compliant |
Download the complete datasheet for NXP PBSS8110D,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
