NPN Bipolar Junction Transistor (BJT) with a maximum collector current of 1 A and a maximum collector-emitter voltage of 100 V. Features low VCEsat for efficient switching. Housed in a 3-terminal TO-236AB package. Maximum operating temperature reaches 150°C.
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Technical Specifications
NXP PBSS8110T,215 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PBSS8110T,215 Datasheet
Download the complete datasheet for NXP PBSS8110T,215 to view detailed technical specifications.
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