NXP
PDTB113ET
TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
PackageTO-236AB
MountingSurface Mount
PolarityPNP
Power250mW
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Technical Specifications
NXP PDTB113ET technical specifications.
General
Package/Case
TO-236AB
Collector Emitter Saturation Voltage
300mV
Emitter Base Voltage (VEBO)
-10V
Height
1mm
Length
3mm
Max Collector Current
500mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Mount
Surface Mount
Polarity
PNP
Power Dissipation
250mW
RoHS Compliant
Yes
Width
1.4mm
Compliance
RoHS
Compliant
Datasheet
NXP PDTB113ET Datasheet
Download the complete datasheet for NXP PDTB113ET to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.