The PDTB123EK,115 is a surface mount bipolar junction transistor from NXP, packaged in a TO-236-3 case. It features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. The device is rated for a maximum power dissipation of 250mW and is compliant with RoHS regulations. The transistor is available in tape and reel packaging with a quantity of 3000 units per reel.
NXP PDTB123EK,115 technical specifications.
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 500mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
