The PDTB123TK,115 is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. It has a maximum power dissipation of 250mW and is packaged in a TO-236-3 surface mount package. The transistor is RoHS compliant and available in quantities of 3000 per reel. Operating temperature range is not specified in the provided data.
PackageTO-236-3
MountingSurface Mount
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Technical Specifications
NXP PDTB123TK,115 technical specifications.
General
| Package/Case | TO-236-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Max Collector Current | 500mA |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
NXP PDTB123TK,115 Datasheet
Download the complete datasheet for NXP PDTB123TK,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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