NPN digital transistor featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. This single-element component offers a 150mV collector-emitter saturation voltage and a 230MHz transition frequency. Housed in a compact SOT-23-3 surface-mount package, it operates within a temperature range of -65°C to 150°C with a maximum power dissipation of 250mW. Integrated resistors include 10 kOhm values for both base-emitter and collector-base circuits.
PackageSOT-23-3
MountingSurface Mount
PolarityNPN
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Technical Specifications
NXP PDTC114ET215 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Continuous Collector Current | 100mA |
| Element Configuration | Single |
| Emitter Base Voltage (VEBO) | 10V |
| Height | 1mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Mount | Surface Mount |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 230MHz |
| Weight | 1.437803g |
| Width | 1.4mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
NXP PDTC114ET215 Datasheet
Download the complete datasheet for NXP PDTC114ET215 to view detailed technical specifications.
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