NPN bipolar junction transistor featuring integrated resistors (R1 = 100 kOhm, R2 = open) in a compact SC-75 3-pin surface-mount package. Offers a 50V collector-emitter breakdown voltage and a maximum continuous collector current of 100mA. Achieves a low collector-emitter saturation voltage of 150mV and a minimum hFE of 100. Operates across a wide temperature range from -65°C to 150°C with a power dissipation of 150mW. This RoHS compliant component is designed for efficient switching and amplification applications.
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NXP PDTC115TE,115 technical specifications.
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 150mV |
| Continuous Collector Current | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 0.85mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 1.8mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Width | 0.9mm |
| RoHS | Compliant |
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