The PDTC123JT is an NPN bipolar junction transistor with a collector base voltage of 50V and a maximum collector current of 100mA. It features a gain bandwidth product of 230MHz and a collector emitter saturation voltage of 100mV. The transistor is packaged in a small outline SOT-23 package and is available on cut tape. It operates over a temperature range of -65°C to 150°C and is compliant with RoHS regulations.
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NXP PDTC123JT technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector Emitter Voltage (VCEO) | 100mV |
| Emitter Base Voltage (VEBO) | 10V |
| Gain Bandwidth Product | 230MHz |
| Height | 1.1mm |
| hFE Min | 100 |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 250mW |
| Number of Elements | 1 |
| Packaging | Cut Tape |
| Polarity | NPN |
| Power Dissipation | 250mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 230MHz |
| RoHS | Compliant |
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