NXP
PDTC123JT
TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
PackageSOT-23
PolarityNPN
Power250mW
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Technical Specifications
NXP PDTC123JT technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
100mV
Collector Emitter Voltage (VCEO)
100mV
Emitter Base Voltage (VEBO)
10V
Gain Bandwidth Product
230MHz
Height
1.1mm
hFE Min
100
Max Collector Current
100mA
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
250mW
Number of Elements
1
Packaging
Cut Tape
Polarity
NPN
Power Dissipation
250mW
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
230MHz
Compliance
RoHS
Compliant
Datasheet
NXP PDTC123JT Datasheet
Download the complete datasheet for NXP PDTC123JT to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.