PNP general purpose double transistor in a SOT-666 package. Features a collector-emitter breakdown voltage of 40V, maximum collector current of 100mA, and a gain bandwidth product of 100MHz. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 200mW. This surface mount component is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-666
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
NXP PEMT1,115 technical specifications.
General
Package/Case
SOT-666
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
200mV
Collector-emitter Voltage-Max
200mV
Emitter Base Voltage (VEBO)
-5V
Gain Bandwidth Product
100MHz
Height
0.6mm
hFE Min
120
Lead Free
Lead Free
Length
1.7mm
Max Breakdown Voltage
40V
Max Collector Current
100mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
200mW
Mount
Surface Mount
Package Quantity
4000
Packaging
Tape and Reel
Polarity
PNP
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
NXP PEMT1,115 Datasheet
Download the complete datasheet for NXP PEMT1,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
