PNP general purpose double transistor in a SOT-666 package. Features a collector-emitter breakdown voltage of 40V, maximum collector current of 100mA, and a gain bandwidth product of 100MHz. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 200mW. This surface mount component is lead-free and RoHS compliant.
Frequency100MHz
PackageSOT-666
MountingSurface Mount
PolarityPNP
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Technical Specifications
NXP PEMT1,115 technical specifications.
General
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.6mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PEMT1,115 Datasheet
Download the complete datasheet for NXP PEMT1,115 to view detailed technical specifications.
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