PNP general purpose double transistor in a SOT-666 package. Features a collector-emitter breakdown voltage of 40V, maximum collector current of 100mA, and a gain bandwidth product of 100MHz. Operates across a temperature range of -65°C to 150°C with a maximum power dissipation of 200mW. This surface mount component is lead-free and RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PEMT1,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 200mV |
| Emitter Base Voltage (VEBO) | -5V |
| Gain Bandwidth Product | 100MHz |
| Height | 0.6mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 1.7mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for NXP PEMT1,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
