The PEMZ1TR is a general-purpose NPN/PNP transistor available in a SOT-666 package. It can handle a collector-emitter voltage of up to 40V and a continuous collector current of 100mA. The transistor has a maximum power dissipation of 300mW and operates within a temperature range of -65°C to 150°C. It is lead-free and suitable for use in a variety of applications.
NXP PEMZ1TR technical specifications.
| Package/Case | SOT-666 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector-emitter Voltage-Max | 40V |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 300mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| DC Rated Voltage | 40V |
| RoHS | Compliant |
Download the complete datasheet for NXP PEMZ1TR to view detailed technical specifications.
No datasheet is available for this part.