Low capacitance double bidirectional ESD protection diodes designed for transient voltage suppression. Featuring 3 terminals in a TO-236AB (SOT23) package, these silicon diodes offer bidirectional polarity and two elements for robust protection. Key specifications include a maximum operating temperature of 150°C, a repetitive peak reverse voltage of 15V, and a non-repetitive peak reverse power dissipation of 200W. Breakdown voltage ranges from a minimum of 17.1V to a maximum of 20.3V, with a nominal value of 18.8V, and a maximum clamping voltage of 44V.
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NXP PESD15VL2BT,215 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Breakdown Voltage-Min | 17.1 |
| Non-rep Peak Rev Power Dis-Max | 200 |
| Clamping Voltage-Max | 44 |
| Breakdown Voltage-Nom | 18.8 |
| Breakdown Voltage-Max | 20.3 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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