The PESD15VS2UT,215 transient voltage suppressor diode from NXP is a unidirectional silicon device with a maximum operating temperature of 150 degrees Celsius. It has a nominal breakdown voltage of 18 volts and a maximum breakdown voltage of 18.4 volts. The diode can handle a non-repetitive peak reverse power dissipation of 160 milliwatts. It is packaged in a 3-pin TO-236AB package type R-PDSO-G3.
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NXP PESD15VS2UT,215 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 15 |
| Breakdown Voltage-Min | 17.6 |
| Non-rep Peak Rev Power Dis-Max | 160 |
| Breakdown Voltage-Nom | 18 |
| Breakdown Voltage-Max | 18.4 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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