This 3-terminal, 3-pin transient voltage suppressor diode offers robust ESD protection. Featuring two unidirectional silicon diode elements, it operates up to a maximum of 150°C. The device provides a repetitive peak reverse voltage of 3.3V, with a minimum breakdown voltage of 5.2V and a nominal breakdown voltage of 5.6V. It boasts a non-repetitive peak reverse power dissipation of 330W and is housed in a TO-236AB (SOT23) package.
NXP PESD3V3S2UT,215 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 3.3 |
| Breakdown Voltage-Min | 5.2 |
| Non-rep Peak Rev Power Dis-Max | 330 |
| Breakdown Voltage-Nom | 5.6 |
| Breakdown Voltage-Max | 6 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for NXP PESD3V3S2UT,215 to view detailed technical specifications.
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