Bidirectional Transient Voltage Suppressor Diode, featuring low capacitance for ESD protection. This silicon diode offers a repetitive peak reverse voltage of 5V and a breakdown voltage range from 7V to 8.2V, with a nominal value of 7.6V. It provides a maximum clamping voltage of 33V and a non-repetitive peak reverse power dissipation of 500mW. Designed with 2 terminals in a SOD323 package, this component operates up to a maximum temperature of 150°C.
PolarityBIDIRECTIONAL
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Technical Specifications
NXP PESD5V0L1BA,115 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
5
Breakdown Voltage-Min
7
Non-rep Peak Rev Power Dis-Max
500
Clamping Voltage-Max
33
Breakdown Voltage-Nom
7.6
Breakdown Voltage-Max
8.2
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
Compliant
Military Spec
False
Datasheet
NXP PESD5V0L1BA,115 Datasheet
Download the complete datasheet for NXP PESD5V0L1BA,115 to view detailed technical specifications.
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