Bidirectional Transient Voltage Suppressor Diode, featuring low capacitance for ESD protection. This silicon diode offers a repetitive peak reverse voltage of 5V and a breakdown voltage range from 7V to 8.2V, with a nominal value of 7.6V. It provides a maximum clamping voltage of 33V and a non-repetitive peak reverse power dissipation of 500mW. Designed with 2 terminals in a SOD323 package, this component operates up to a maximum temperature of 150°C.
PolarityBIDIRECTIONAL
Quick Jump:
Technical Specifications
NXP PESD5V0L1BA,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 7 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 33 |
| Breakdown Voltage-Nom | 7.6 |
| Breakdown Voltage-Max | 8.2 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PESD5V0L1BA,115 Datasheet
Download the complete datasheet for NXP PESD5V0L1BA,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.