Bidirectional TVS Diode for circuit protection. Features 5V reverse standoff voltage and 7.2V minimum breakdown voltage, with a maximum breakdown voltage of 7.9V. Offers 11V clamping voltage, up to 17V maximum clamping voltage, and 2.5A peak pulse current capability. Operates across a wide temperature range from -65°C to 150°C, with low leakage current of 25nA. Packaged in an 8-pin SOIC surface mount package with 7 channels and 4 elements.
PackageSOIC
Capacitance10pF
Voltage Rating5V
MountingSurface Mount
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Technical Specifications
NXP PESD5V0L7BS118 technical specifications.
General
Capacitance
10pF
Package/Case
SOIC
Clamping Voltage
11V
Clamping Voltage-Max
17V
Depth
4mm
Direction
Bidirectional
ESD Protection
Yes
Height
1.45mm
Lead Free
Lead Free
Leakage Current
25nA
Length
5mm
Max Breakdown Voltage
7.9V
Min Breakdown Voltage
7.2V
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
35W
Max Reverse Leakage Current
25nA
Max Surge Current
2.5A
Mount
Surface Mount
Number of Channels
7
Number of Elements
4
Operating Supply Voltage
5V
Package Quantity
1
Packaging
Tape and Reel
Peak Pulse Current
2.5A
Peak Pulse Power
35W
Polarity
Bidirectional
Radiation Hardening
No
Reverse Breakdown Voltage
7.2V
Reverse Standoff Voltage
5V
Series
PESD5V0L7BS
Termination
SMD/SMT
Width
4mm
Working Voltage
5V
Compliance
RoHS
Compliant
Datasheet
NXP PESD5V0L7BS118 Datasheet
Download the complete datasheet for NXP PESD5V0L7BS118 to view detailed technical specifications.
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