Bidirectional Transient Voltage Suppressor Diode, designed for ESD protection. Features low capacitance and a 2-terminal SOD package. Offers a repetitive peak reverse voltage of 5V, with breakdown voltage ranging from a minimum of 5.5V to a maximum of 9.5V, and a nominal breakdown voltage of 7.5V. Maximum clamping voltage is 14V, with a non-repetitive peak reverse power dissipation of 130W. Operates up to a maximum temperature of 150°C.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the NXP PESD5V0S1BA,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PESD5V0S1BA,115 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 5.5 |
| Non-rep Peak Rev Power Dis-Max | 130 |
| Clamping Voltage-Max | 14 |
| Breakdown Voltage-Nom | 7.5 |
| Breakdown Voltage-Max | 9.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for NXP PESD5V0S1BA,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
