Bidirectional Transient Voltage Suppressor Diode, designed for ESD protection. Features a low capacitance and a 2-terminal, dual-position configuration. Offers a maximum operating temperature of 150°C, with a repetitive peak reverse voltage of 5V. Breakdown voltage ranges from a minimum of 5.5V to a maximum of 9.5V, with a nominal value of 7.5V. Non-repetitive peak reverse power dissipation is up to 130W, and clamping voltage is a maximum of 14V.
Sign in to ask questions about the NXP PESD5V0S1BB,115 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
NXP PESD5V0S1BB,115 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 5.5 |
| Non-rep Peak Rev Power Dis-Max | 130 |
| Clamping Voltage-Max | 14 |
| Breakdown Voltage-Nom | 7.5 |
| Breakdown Voltage-Max | 9.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for NXP PESD5V0S1BB,115 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.