Bidirectional Transient Voltage Suppressor Diode, designed for ESD protection. Features a low capacitance and a 2-terminal, dual-position configuration. Offers a maximum operating temperature of 150°C, with a repetitive peak reverse voltage of 5V. Breakdown voltage ranges from a minimum of 5.5V to a maximum of 9.5V, with a nominal value of 7.5V. Non-repetitive peak reverse power dissipation is up to 130W, and clamping voltage is a maximum of 14V.
PolarityBIDIRECTIONAL
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Technical Specifications
NXP PESD5V0S1BB,115 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Polarity
BIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
5
Breakdown Voltage-Min
5.5
Non-rep Peak Rev Power Dis-Max
130
Clamping Voltage-Max
14
Breakdown Voltage-Nom
7.5
Breakdown Voltage-Max
9.5
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
Compliant
Military Spec
False
Datasheet
NXP PESD5V0S1BB,115 Datasheet
Download the complete datasheet for NXP PESD5V0S1BB,115 to view detailed technical specifications.
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