Bidirectional Transient Voltage Suppressor Diode, designed for ESD protection. Features a low capacitance and a 2-terminal, dual-position configuration. Offers a maximum operating temperature of 150°C, with a repetitive peak reverse voltage of 5V. Breakdown voltage ranges from a minimum of 5.5V to a maximum of 9.5V, with a nominal value of 7.5V. Non-repetitive peak reverse power dissipation is up to 130W, and clamping voltage is a maximum of 14V.
PolarityBIDIRECTIONAL
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Technical Specifications
NXP PESD5V0S1BB,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 5.5 |
| Non-rep Peak Rev Power Dis-Max | 130 |
| Clamping Voltage-Max | 14 |
| Breakdown Voltage-Nom | 7.5 |
| Breakdown Voltage-Max | 9.5 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PESD5V0S1BB,115 Datasheet
Download the complete datasheet for NXP PESD5V0S1BB,115 to view detailed technical specifications.
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