Transient Voltage Suppressor Diode for ESD protection, featuring a UNIDIRECTIONAL SILICON diode element. This device offers a maximum operating temperature of 150°C and a 2-terminal, DUAL pin configuration. Key specifications include a repetitive peak reverse voltage of 5V, a minimum breakdown voltage of 6.4V, and a maximum clamping voltage of 20V. It provides a non-repetitive peak reverse power dissipation of up to 260W.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP PESD5V0S1UB,115 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
2
Terminal Position
DUAL
Pin Count
2
Number of Elements
1
Polarity
UNIDIRECTIONAL
Diode Element Material
SILICON
Diode Type
TRANS VOLTAGE SUPPRESSOR DIODE
Rep Pk Reverse Voltage-Max
5
Breakdown Voltage-Min
6.4
Non-rep Peak Rev Power Dis-Max
260
Clamping Voltage-Max
20
Breakdown Voltage-Nom
6.8
Breakdown Voltage-Max
7.2
Compliance
RoHS
Yes
Eccn Code
EAR99
HTS Code
8541.10.00.50
REACH
Compliant
Military Spec
False
Datasheet
NXP PESD5V0S1UB,115 Datasheet
Download the complete datasheet for NXP PESD5V0S1UB,115 to view detailed technical specifications.
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