Bidirectional transient voltage suppressor diode with low capacitance, designed for ESD protection. Features a 5V repetitive peak reverse voltage and a maximum clamping voltage of 14V. This 3-terminal device, housed in a TO-236AB package, utilizes silicon diode elements and offers a nominal breakdown voltage of 7.5V. It provides a maximum non-repetitive peak reverse power dissipation of 130W and operates up to 150°C.
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NXP PESD5V0S2BT,215 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| JEDEC Package Code | TO-236AB |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 5.5 |
| Non-rep Peak Rev Power Dis-Max | 130 |
| Clamping Voltage-Max | 14 |
| Breakdown Voltage-Nom | 7.5 |
| Breakdown Voltage-Max | 9.5 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
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