The PESD5V0S2UQ,115 transient voltage suppressor diode from NXP features a maximum operating temperature of 150 degrees Celsius. It has a unidirectional polarity and is constructed with silicon diode elements. The device is a 3-pin, ultra small, plastic, surface mount component. It can withstand a maximum reverse voltage of 5V and a non-repetitive peak reverse power dissipation of 110mW. The breakdown voltage is nominally 6.8V and maximally 7.14V.
PolarityUNIDIRECTIONAL
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Technical Specifications
NXP PESD5V0S2UQ,115 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 2 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 5 |
| Breakdown Voltage-Min | 6.46 |
| Non-rep Peak Rev Power Dis-Max | 110 |
| Clamping Voltage-Max | 20 |
| Breakdown Voltage-Nom | 6.8 |
| Breakdown Voltage-Max | 7.14 |
| Power Dissipation-Max | 0.425 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
NXP PESD5V0S2UQ,115 Datasheet
Download the complete datasheet for NXP PESD5V0S2UQ,115 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.