The PH16030L,115 is a N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 38A and a drain to source breakdown voltage of 30V. The device features a drain to source resistance of 16.9mR and a maximum power dissipation of 41.6W. The PH16030L,115 is packaged in a SOT-669 package and is suitable for surface mount applications. It is RoHS compliant and part of the TrenchMOS series.
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NXP PH16030L,115 technical specifications.
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 16.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 680pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 41.6W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 41.6W |
| Radiation Hardening | No |
| Rds On Max | 16.9mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
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