The PH3855L,115 is an N-channel TrenchMOS MOSFET with a maximum drain to source breakdown voltage of 55V and a continuous drain current of 24A. It features a drain to source resistance of 36mR and a maximum power dissipation of 50W. The device is packaged in a SOT-669 package and is suitable for surface mount applications. The operating temperature range is from -55°C to 175°C, and it is RoHS compliant.
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NXP PH3855L,115 technical specifications.
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 55V |
| Drain to Source Resistance | 36mR |
| Drain to Source Voltage (Vdss) | 55V |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 15V |
| Input Capacitance | 765pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 36mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 17ns |
| RoHS | Compliant |
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