N-channel MOSFET, 30V drain-source breakdown voltage, 84A continuous drain current, and 4.8mΩ maximum drain-source on-resistance. Features include a 1.1mm height, 5mm length, and 4.1mm width in a SOT-669 LFPAK surface-mount package. Operates from -55°C to 150°C with a maximum power dissipation of 62.5W. Includes 28ns turn-on delay, 19ns fall time, and 35ns turn-off delay.
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NXP PH4830L,115 technical specifications.
| Package/Case | SOT-669 |
| Continuous Drain Current (ID) | 84A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 4.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 19ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.1mm |
| Input Capacitance | 2.786nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Rds On Max | 4.8mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 28ns |
| Width | 4.1mm |
| RoHS | Compliant |
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