N-channel MOSFET, 30V drain-source breakdown voltage, 84A continuous drain current, and 4.8mΩ maximum drain-source on-resistance. Features include a 1.1mm height, 5mm length, and 4.1mm width in a SOT-669 LFPAK surface-mount package. Operates from -55°C to 150°C with a maximum power dissipation of 62.5W. Includes 28ns turn-on delay, 19ns fall time, and 35ns turn-off delay.
PackageSOT-669
MountingSurface Mount
PolarityN-CHANNEL
Power62.5W
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Technical Specifications
NXP PH4830L,115 technical specifications.
General
Package/Case
SOT-669
Continuous Drain Current (ID)
84A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
4.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
19ns
Gate to Source Voltage (Vgs)
20V
Height
1.1mm
Input Capacitance
2.786nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
62.5W
Mount
Surface Mount
Package Quantity
1500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
62.5W
Rds On Max
4.8mR
RoHS Compliant
Yes
Series
TrenchMOS™
Turn-Off Delay Time
35ns
Turn-On Delay Time
28ns
Width
4.1mm
Compliance
RoHS
Compliant
Datasheet
NXP PH4830L,115 Datasheet
Download the complete datasheet for NXP PH4830L,115 to view detailed technical specifications.
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