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NXP PH5525L,115 technical specifications.
| Continuous Drain Current (ID) | 81.7A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 5.5mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.15nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Package Quantity | 1500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 62.5W |
| Rds On Max | 5.5mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 28ns |
| RoHS | Compliant |
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