The PHB101NQ04T,118 is a surface mount N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 157W and a continuous drain current of 75A. The device is packaged in a TO-263-3 case and is lead free. It is RoHS compliant and has a drain to source resistance of 8mR.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
Power157W
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Technical Specifications
NXP PHB101NQ04T,118 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 75A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.02nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 157W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 157W |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 51ns |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHB101NQ04T,118 Datasheet
Download the complete datasheet for NXP PHB101NQ04T,118 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.