The PHE13007,127 is a TO-220-3 packaged NPN bipolar junction transistor with a maximum collector-emitter voltage of 400V and a maximum collector current of 8A. It has a maximum power dissipation of 80W and operates over a temperature range of -65°C to 150°C. The transistor is lead free and RoHS compliant. It is available in a package quantity of 50, packaged in a rail or tube. The PHE13007,127 is suitable for a variety of applications including general purpose switching and amplification.
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NXP PHE13007,127 technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 9V |
| Lead Free | Lead Free |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | Yes |
| RoHS | Compliant |
Download the complete datasheet for NXP PHE13007,127 to view detailed technical specifications.
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