PHE13009

NPN BJT Transistor, 400V, 12A, TO-220, Power

NPN bipolar junction power transistor with a 12A continuous collector current and 400V collector-emitter breakdown voltage. Features a maximum collector current of 12A, a maximum power dissipation of 80W, and a maximum operating temperature of 150°C. This through-hole mounted component is housed in a TO-220-3 plastic package. Key specifications include a 700V collector base voltage and a minimum hFE of 8.

Frequency60Hz

PackageTO-220-3

Current Rating12A

MountingThrough Hole

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Technical Specifications

NXP PHE13009 technical specifications.

General

Package/Case	TO-220-3
Collector Base Voltage (VCBO)	700V
Collector Emitter Breakdown Voltage	400V
Collector Emitter Saturation Voltage	2V
Collector-emitter Voltage-Max	400V
Current Rating	12A
Emitter Base Voltage (VEBO)	1.6V
Height	15.8mm
hFE Min	8
Lead Free	Lead Free
Length	10.3mm
Max Collector Current	12A
Max Frequency	60Hz
Max Operating Temperature	150°C
Min Operating Temperature	-65°C
Max Power Dissipation	80W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	NPN
Reach SVHC Compliant	No
RoHS Compliant	Yes
DC Rated Voltage	700V
Width	4.5mm