N-channel MOSFET in SO package, designed for surface mount applications. Features 100V drain-to-source breakdown voltage and 11.6A continuous drain current. Offers low 28mΩ drain-to-source resistance and 8.9W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C, with fast switching characteristics including a 23ns turn-on delay and 11ns fall time. Packaged in tape and reel for efficient assembly.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power8.9W
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Technical Specifications
NXP PHK12NQ10T518 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 11.6A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.45mm |
| Input Capacitance | 1.965nF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 8.9W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 8.9W |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 52ns |
| Turn-On Delay Time | 23ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
NXP PHK12NQ10T518 Datasheet
Download the complete datasheet for NXP PHK12NQ10T518 to view detailed technical specifications.
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