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Technical Specifications
NXP PHK4NQ10T,518 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
4A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
70mR
Drain to Source Voltage (Vdss)
100V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
880pF
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
70mR
RoHS Compliant
No
Series
TrenchMOS™
Turn-Off Delay Time
26ns
Turn-On Delay Time
6ns
Compliance
RoHS
Not CompliantNo
Datasheet
NXP PHK4NQ10T,518 Datasheet
Download the complete datasheet for NXP PHK4NQ10T,518 to view detailed technical specifications.
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