The PHK4NQ10T,518 is an N-CHANNEL TrenchMOS MOSFET with a maximum operating temperature range of -65°C to 150°C. It has a continuous drain current of 4A and a drain to source breakdown voltage of 100V. The device features a drain to source resistance of 70mR and an input capacitance of 880pF. It is packaged in a SO package and is suitable for surface mount applications.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
NXP PHK4NQ10T,518 technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 70mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 880pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | No |
| Series | TrenchMOS™ |
| Turn-Off Delay Time | 26ns |
| Turn-On Delay Time | 6ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
NXP PHK4NQ10T,518 Datasheet
Download the complete datasheet for NXP PHK4NQ10T,518 to view detailed technical specifications.
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